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| IXFN 58N50 IXFN 61N50 Preliminary Data Sheet VDSS ID25 58A 61A RDS(on) 85 m 75 m High Current Power MOSFET N-Channel Enhancement Mode IXFN 58N50 500V IXFN 61N50 500V Symbol VDSS VDGR V GS V GSM I D25 I DM PD TJ TJM Tstg VISOL Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1.0 M Continuous Transient TC = 25C TC = 25C (1) TC = 25C IXFN IXFN IXFN IXFN Maximum Ratings 500 500 20 30 58N50 61N50 58N50 61N50 58 61 232 244 625 -40 ... +150 150 -40 ... +150 V V V V A A A A W C C C V~ V~ Features * International standard package * Isolation voltage 3000V (RMS) * Low R DS (on) HDMOSTM processl * Rugged polysilicon gate cell structure * Low drain-to-case capacitance (<60 pF) - reduced RFI * Low package inductance (< 10 nH) - easy to drive and to protect * Aluminium Nitride Isolation - increased current ratings Applications * DC choppers * AC motor speed controls * DC servo and robot drives * Uninterruptible power supplies (UPS) * Switched mode and resonant mode power supplies Advantages * Easy to mount * Space savings * High power density 1 = Source 3 = Drain 2 miniBLOC, SOT-227 B 1 4 3 2 = Gate 4 = Source 50/60 Hz, RMS t = 1 minute t = 1s 2500 3000 Md Mounting torque Terminal connection torque (M4) 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 75 g mJ Weight EAR Symbol Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) Min. Typ. Max. 500 1.7 4.0 200 500 2 V V nA A mA V DSS V GS(th) I GSS I DSS R DS(on) VGS = 0 V, I D = 5 mA VDS = V GS, ID = 12 mA VGS = 20 V DC, VDS = 0 VDS = 0.8 V DSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 TJ = 25C TJ = 125C 58N50 61N50 Pulse test, t 300 s, duty cycle 2 % 85 m 75 m IXYS reserves the right to change limits, test conditions, and dimensions. (c)1996 IXYS Corporation. All rights reserved. 92810G (10/95) IXYS Semiconductor Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629 IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 IXFN 58N50 IXFN 61N50 Symbol Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) Min. Typ. Max. 20 30 11 1550 225 VGS = 10 V, VDS = 0.5 VDSS , ID = 50 A RG = 1 (External) 30 60 100 50 VGS = 10 V, VDS = 0.5 VDSS , ID = ID25 420 55 160 S nF pF pF ns ns ns ns nC nC nC 0.20 K/W 0.05 K/W Package Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 ID25, pulse test VGS = 0 V, VDS = 25 V, f = 1 MHz Source-Drain Diode Symbol IS I SM VSD Test Conditions VGS = 0 Ratings and Characteristics (T J = 25C unless otherwise specified) Min. Typ. Max. 61 244 1.5 A A V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle 2 % trr Notes: IF = 50A, di/dt = -100 A/s, VR = 100 V 250 ns 1. Pulse width limited by max TJ. 2. IF < IDM, di/dt < 100 A/s, VDD < VDSS, TJ < 150C, RG = 2. The data supplied herein reflects the pre-production objective specification and characterization from engineering lots. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 4,850,072 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
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